| 摘要 |
PURPOSE:To connect first and second Al layers positively and stably without influencing an adverse effect on an element by forming the first Al layer or Al alloy layer to the main surface of a semiconductor substrate under decompression and forming a metallic silicide film. CONSTITUTION:The Si semiconductor substrate 1 to which a thermal oxide film 2 is formed is entered in a decompression vessel, and an Al-Si alloy film 3 as the first Al layer is formed to the main surface of the substrate 1 by using an Al-Si alloy target. An MoSi2 film 4 is formed by using an MoSi2 target. The substrate 1 is extracted from the inside of the decompression vessel, and the layer 4 and the alloy layer 3 are pattern-etched. An SiO2 film 5 is formed through a thermal decomposition method of monosilane, and a contact hole 6 for connecting the layer 3 and the second Al layer 7 is formed to the film 5. The second Al layer 7 is formed by using the Al-Si alloy target by a DC magnetron sputtering device. The layer 3 and the layer 7 are connected positively and stably without influencing an adverse effect on the elements by pattern-etching the layer 7. |
