| 摘要 |
PURPOSE:To enhance the intensity of self-orientation and reduce the intensity distribution by using inactive gas including water to form a magnesia thin film by the sputtering. CONSTITUTION:An insulator or semiconductor is used to a substrate and it is placed under the vacuum condition with pressure of 10<-4>Torr or less, desirably under the pressure of 10<-5>Torr is less. In this case, a substrate temperature is set within the range of 100 deg.C-300 deg.C in order to enhance the orientation intensity of magnesia and also enhance orientation intensity of niob nitride oriented in the same direction as the magnesia base material to be formed on said magnesia. Thereafter, the magnesia film is formed by the RF sputter using the sputter gas such as inactive gas of argon. After the sputter condition is set, the substrate surface is etched for about several hundreds A in order to remove contaminated layer of the substrate surface. Thereafter, a film of about 80nm is formed by the RF sputter using MgO as the target, niob nitride is formed by the epitaxial growth method on the MgO in the thickness of about 10nm under the same vacuum condition. |
