| 摘要 |
PURPOSE:To enable to braze a semiconductor laser chip to an Si sub mount and a metallic block at the same time by a method wherein an Au plated film is provided previously on the main surface whereon the semiconductor laser chip is enabled to be brazed. CONSTITUTION:The Si sub mount 1' is mounted on the Ag block 3, and the semiconductor laser chip 2' is mounted on the sub mount 1'. Au plated films 15-17 are formed respectively on the brazing surfaces of the sub mount 1' and the laser chip 2'. When these elements successively mounted are heated, the platings 15-17 on each junction surface fuse, resulting in connection each other. Thereby, the semiconductor laser element, Si sub mount, and metallic block can be brazed at the same time; therefore the yield of the laser device and the workability of the manufacture can be contrived to improve. |
