发明名称 Gold-doped IC resistor region
摘要 Resistive elements of semiconductor devices and integrated circuits are reduced in size thereby allowing larger scale integration. Deep level dopants including impurities or crystalline lattice defects, or both, are formed in a low resistance doped region thereby increasing the resistance of a portion of the doped region. Resistive contacts and interconnects require less semiconductor surface area.
申请公布号 US4432008(A) 申请公布日期 1984.02.14
申请号 US19800170562 申请日期 1980.07.21
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY 发明人 MALTIEL, RON
分类号 H01L21/02;H01L21/768;H01L23/522;H01L23/64;H01L27/06;H01L29/08;H01L29/167;H01L29/32;H01L29/8605;(IPC1-7):H01L27/04;H01L29/16 主分类号 H01L21/02
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