发明名称 |
Gold-doped IC resistor region |
摘要 |
Resistive elements of semiconductor devices and integrated circuits are reduced in size thereby allowing larger scale integration. Deep level dopants including impurities or crystalline lattice defects, or both, are formed in a low resistance doped region thereby increasing the resistance of a portion of the doped region. Resistive contacts and interconnects require less semiconductor surface area.
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申请公布号 |
US4432008(A) |
申请公布日期 |
1984.02.14 |
申请号 |
US19800170562 |
申请日期 |
1980.07.21 |
申请人 |
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
MALTIEL, RON |
分类号 |
H01L21/02;H01L21/768;H01L23/522;H01L23/64;H01L27/06;H01L29/08;H01L29/167;H01L29/32;H01L29/8605;(IPC1-7):H01L27/04;H01L29/16 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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