| 摘要 |
<p>A semiconductor memory device comprises a plurality of static-type memory cells (MC) connected to pairs of word lines (W), each word-line pair being composed of a word-line (W+) having a high potential and a word-line (W-) having a low potential, and a plurality of word-line discharging circuits, each being connected to one of the word-line pairs. Each of the word-line discharging circuits comprises a thyristor whose anode is connected, via a voltage level shifter, to a word-line having a high potential and whose cathode is connected to a constant-current source or a constant-voltage source. Intrinsic capacitance of the thyristor is used, in place of a separate capacitive element, to determine discharge periods, thereby saving space that would otherwise be taken up by such separate capacitive elements.</p> |
