| 摘要 |
PURPOSE:To obtain through-holes with the diameters of size the same as or smaller than the thickness of an insulator film by filling all of the through- holes with a conductor and forming an insulating film to the upper section of the through-holes once. CONSTITUTION:An aluminum wiring 13 is formed onto an Si substrate 12 on which an oxide film 11 is formed, and an organic insulating film 14 of 10mum thickness is formed onto the wiring 13. An angle of steep inclination of 80 deg. or more is formed in the side wall of the through-hole 14' acquired by sputtering and etching the organic film in an oxygen atmosphere while using a molybdenum film 15 as a mask. Aluminum 16, 17 is evaporated vertically to the surface from an upper section. The evaporation is adjusted so that the thickness of an evaporated film 16 is made approximately the same as that of the organic insulating film 14 at that time. The insulating film 18 of the same quality as the oxide film 11 is formed to the whole surface of the substrate, and the through-hole section 18' of the organic insulating film 18 is bored. An aluminum metallic layer 19 is evaporated to the upper section of the through-hole section, and the through-hole conductor path is formed through processing to a predetermined shape by photoetching. |
