Buried heterostructure laser diode

摘要

According to the present invention, an active semiconductor layer is provided on a mesa top of a semiconductor substrate having a strip-shaped mesa structure. A first clad layer is provided on the surface of the active layer and on the sides of the mesa to burry the top active region. Thereafter a pair of current blocking layers are provided on the first clad layer except for the top surface portion of the mesa stripe and a second clad layer is provided on the current blocking layers and the exposed first clad layer.