发明名称 |
Method for determining oxygen content in semiconductor material |
摘要 |
The content of oxygen, if any, that is present in a body of essentially monocrystalline semiconductor material is determined by converting by heating all of the oxygen in the body to interstitial form. The oxygen content is measured by infrared beam evaluation of the absorption band to identify the interstitial oxygen present in the material.
|
申请公布号 |
US4429047(A) |
申请公布日期 |
1984.01.31 |
申请号 |
US19810297176 |
申请日期 |
1981.08.28 |
申请人 |
RCA CORPORATION |
发明人 |
JASTRZEBSKI, LUBOMIR L.;LAGOWSKI, JACEK |
分类号 |
G01N21/35;(IPC1-7):G01N21/35 |
主分类号 |
G01N21/35 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|