| 摘要 |
PURPOSE:To manufacture simply and economically the thin film discrete R-C circuit by a method wherein the anodic oxidation process is reduced to one time, while the formation process of a tantalum thin film for a resistor is made to be unnecessary. CONSTITUTION:A tantalum nitride thin film 2 for formation of a capacitor is performed on a substrate 1 according to glow discharge, the unnecessary parts thereof are etched to be removed, and after a resistance window 3 and a capacitance slit 4 are formed, a tantalum nitride thin film 6 doped with oxygen for formation of a resistor is performed on the whole surface according to sputtering, and etching is performed to form the resistor at the resistance window part. Then constant voltage formation of the thin film 2, 6 in the region decided as to be used as a capacitor is performed to convert the films into a tantalum oxide 5. After anodic oxidation is performed, the mask is removed, and for formation of capacitor electrodes and inside wiring conductors, an electrode thin film 7 of nichrome-gold is evaporated in a vacuum on the whole surface of the substrate 1, and to complete the R-C circuit net pattern, after a part of the electrode thin film 7 is selectively etched to be removed, the heat treatment for stabilization of the resistor is performed, and the resistor is adjusted to obtain the objective resistance value according to the laser trimming method. |
