| 摘要 |
PURPOSE:To realize the shortening of period for trial manufacture and the cost reduction by a method wherein a high density buried diffused region is not allowed to exist immediately under a high density impurity diffused region for intersecting metallic wirings. CONSTITUTION:Islands 11, 12, 13, 14, 15, 16, 17, 18, and 19 are isolated by an insulation isolation diffused region 20. A tunnel resistor is arranged on the island 15, and an epitaxial resistor on the island 16, and while the elements of the islands 11, 12, 13, 14, 17, 18, and 19 in the periphery thereof have buried diffused regions shown by dot and chain lines. The use of the structure (B type in the figure) by this invention enables to move the tunnel resistor of the island 15 to left more than present by changing the process after insulation isolation pattern without changing buried diffused pattern, even in consideration of the condition that the wiring is not overloaded and the island 15 is electrically isolated from the peripheral islands, and, accompanied with it, the left side electrode of the epitaxial resistor existing on the island 16 can be prolonged to the left, accordingly the desired value of resistance can be obtained. |
