| 摘要 |
PURPOSE:To contrive to unify the transverse mode by making the width of a light emitting region close to a stripe width and reduce the value of threshold current by a method wherein stripe structures are added to both sides in the vertical direction of an active layer. CONSTITUTION:N-A GaAs layers 30a and 30b are formed on a P-A GaAs layer 23a, and a P-A GaAs layer 23b is laminated and then joined with 23a at the exposed surface of the stripe width W, resulting in the constitution of a semiconductor layer 23. The P-N junction part between the layer 23b and the layers 30a, 30b becomes into reverse bias when a forward directional voltage is impressed on electrodes 24 and 28, and then a stricture current passage 31 of the stripe width W is formed. A non-diffused region 32 is formed on an electrode layer 27 in band form, current stricture layers 29a and 29b are formed by diffusing zinc to both side, and accordingly a stricture current passage 33 of the stripe width W is formed. The light emitting region 35 of the width approximately equal to the stripe width W is formed in the active layer 25, therefore the unification of the transverse mode is facilitated. |
