| 摘要 |
A read-only memory device in which the presence or absence of a MOS transistor in a memory cell located at each intersection between word lines and bit lines is disclosed. In this device, when data belonging to one word line is written into the memory cells, the original data or the inverted data of the original data is written. The determination whether or not the data is inverted is performed in accordance with the number of data "0" or "1" belonging to each word line.
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