| 摘要 |
PURPOSE:To form a positive resist pattern with superior sensitivity and dry etching resistance by using a resist material obtd. by introducing alpha,alpha'-dimethylbenzyl groups into a specified (co)polymer. CONSTITUTION:A resist material is made of a (co)polymer having the structure of polystyrene and alpha,alpha'-dimethylbenzyl groups bonded to the aromatic rings, e.g. a polymer represented by formula I or II, or it is composed of a polymer having the structure of polystyrene and a polymer having branched alpha,alpha'-dimethylbenzyl groups. The polymers are used in the form of a copolymer represented by formula III or the like. A positive resist pattern with high sensitivity and superior dry etching resistance is formed by exposing the resist material to high energy radiant light. |
