| 摘要 |
PURPOSE:To disperse the stress resulting from the contraction due to the hardening of sealing resin and the drop in temperature, to reduce the fluctuations in characteristics of a semiconductor device, and to prevent the protective film on the surface from breakdown by a method wherein the surface and the side face of the semiconductor device adhered to a die-pad are coated with the elastic material such as silicon resin, and resin is sealed thereon. CONSTITUTION:After silver or gold-plated layer 6 has been formed on the bottom face 5 of a die-pad 3 and on the part corresponding to the tip part of an inner lead 4, a press working is performed. Then, the semiconductor device 7, consisting of silicon and other compound, is adhered to the bottom face 5 of the die-pad 3 with silver paste and by performing a gold-silicon eutectic method. Then, the terminal 8 formed on the surface of the semiconductor device 7 and the metal-plated layer 6 of the inner lead 4 are connected using the metal fine wire 9 consisting of the alloy of gold, silver, copper and aluminum. Subsequently, a liquid elastic material 10, having elasticity after hardened like silicon resin, is dripped on the semiconductor device 7 in such a manner that the material 10 does not overflow a partition wall 2 and the entire semiconductor device 7 is buried. The above- mentioned liquid elastic material 10 is turned to jelly-formed elastic resin 10 when hardened. Then, the above-mentioned material is charged in the cavity of package molding metal, fused novolac epoxy resin 11 and the like is filled in, and it is hardened. |
