| 摘要 |
PURPOSE:To improve productivity by constituting the titled device by a shaft set up to a cylindrical reaction furnace, a susceptor fitted to the shaft, an input terminal supplying high-frequency power, a nozzle for supplying a gas, a gas supply port and a heater for heating. CONSTITUTION:A shaft 2 is installed in a cylindrical reaction furnace 1, and a plurality of susceptors 4 to which wafers 3 are fitted are fixed to the shaft 2. The shaft 2 is connected to a gas supply port 5 necessary for forming a film outside the furnace 1, and the gas flowing into the shaft 2 is ejected into the furnace 1 from nozzles 6 set up to the shaft 2. Plasma discharge is generated among both the upper and intermediate susceptors and both the intermediate and lower ones because an input terminal 7 supplying the susceptor 4 at the center with high-frequency power is formed to the upper section of the shaft 2 and the upper and lower susceptors 4 are grounded. A heater 8 for heating the susceptors 4 and the wafers 3 is installed to the outer circumference of the furnace 1. Accordng to such constitution, an effective area of the susceptor 4 is increased, the quantity of treatment is augmented, and productivity is improved. |
