发明名称 MANUFACTURE OF SEMICONDUCTOR LASER DIODE
摘要 PURPOSE:To make current confinement highly accurate and to improve reproducibility of embedded layers, by forming an active layer in clad layers, and selectively etching the layers by two kinds of chemical etchants. CONSTITUTION:An etching stopping layer 11 is formed on a substrate 10. Then, a first clad layer 12, an active layer 13, a second clad layer 14, and an etching mask layer 15 are sequentially grown. A stripe film of resist is attached. A mask by the etching mask layer 15 is formed by an etchant, which etches only the active layer 13. Then, etching is performed to the stopping layer 11 by another etchant, with the mask layer 15 as a mask. Furthermore, embedded layers 16 and 17 are formed, and an electrode 18 is formed. In this constitution, the reproducibility of the embedded layers is improved, and current confining efficiency is improved owing to the embedded layers being made into drum shape.
申请公布号 JPS58219787(A) 申请公布日期 1983.12.21
申请号 JP19820101347 申请日期 1982.06.15
申请人 OKI DENKI KOGYO KK 发明人 IMANAKA KOUICHI;HORIKAWA HIDEAKI;KAWAI YOSHIO
分类号 H01L21/308;H01S5/00;H01S5/227 主分类号 H01L21/308
代理机构 代理人
主权项
地址