发明名称 Biased power transistor driving circuit.
摘要 <p>A circuit for driving a power transistor that forms part of an inverter circuit used in motor control in which the circuit is switched at high voltages. The motor drive circuit isolates and amplifies a control signal so as to operate the power switching transistors. The base drive circuit employs two characteristics of power transitors to derive maximum protection and maximum performance simultaneously. This control is accomplished by sensing both the collector-to-emitter voltage of the power transistor as well as the base-to-emitter voltage thereof. In an alternate embodiment described herein, a feedback circuit is also provided sensitive to collector-to-emitter voltage for shortening the try-time associated with the power transistor.</p>
申请公布号 EP0096174(A2) 申请公布日期 1983.12.21
申请号 EP19830102643 申请日期 1983.03.17
申请人 VEE ARC CORPORATION 发明人 HICKMAN, MARK R.;BROWN, MICHAEL M.
分类号 H03K17/082;(IPC1-7):03K17/08 主分类号 H03K17/082
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