MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent the increase of surface leakage electric current and defect in pressure tightness and also prevent pollution of a quartz tube by covering a phosphorus glass layer with the film of an oxide that contains no phosphorus or a very little phosphorus before the heat treatment. CONSTITUTION:An N type impurity layer 6 that is of the same type as epitaxial layer 3 is formed by diffusion of a phosphoric acid after partially removing an oxide film 2. The oxide film 2 is partially removed to form a P type impurity layer 5. A phosphorus glass layer 1 is formed by phosphoric impurity diffusion. A CVD film 8 that contains no phosphorus or a low concentration of phosphorus is formed on the phosphorus glass layer 1, and the film is annealed in order to strengthen tightness of contact between the CVD film 8 and phosphorus layer 1.