发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To increase storage capacity without increasing the number of address signal input terminals by optionally determining a base address by means of an address data supplied to a register, and selecting, a specified memory cell from a memory array of prescribed bit words by means of an external address signal having the number of bits equal or less than that of the said address data. CONSTITUTION:The specific memory cell is able to be selected within the extent of 256 bit words selectable by means of an 8-bit address signal A0-A7 with the reference of the base address corresponding to a 12-bit address data Da0-Da11. Therefore, the desired memory cell can be selected throughout the entire memory array MA depending on how the base address Abase is set. For the said selection, the external address signal A0-A7 supplied from the address signal input terminal suffices with only 8 bits. As a result, four pieces of address input terminals can be eliminated compared to the case where a 12-bit address signal normally necessary for selecting from a memory array of 4k bit words is directly supplied from the address signal input terminal.
申请公布号 JPS62195788(A) 申请公布日期 1987.08.28
申请号 JP19860037397 申请日期 1986.02.24
申请人 HITACHI LTD 发明人 HAYASHI SHIGEO
分类号 G11C11/401;G11C11/34 主分类号 G11C11/401
代理机构 代理人
主权项
地址