| 摘要 |
PURPOSE:To stabilize the characteristics of an element by implanting the ions of one of O, N and halogen elements to the surface of an Si substrate, from which a p-n junction is exposed, and annealing the surface and improving the substrate into semi-insulating poly Si. CONSTITUTION:An n<+> collector 11, a p base 12, an n emitter 13 and p<+> guard rings 14 are formed to an n type Si base body 10, and the base body is coated with an SiO2 film 15. The SiO2 film of a section, to the surface thereof the main junction is exposed, is removed through etching, O ions are implanted and annealed, and the whole is annealed at 900 deg.C in an O2 air current to form an insulating poly Si layer 16. SiO2 is formed as the surface layer of the layer 16. A window is bored to the film 15, and an electrode is attached. According to said constitution, both the characteristics of the element and yield are stabilized. |
