| 摘要 |
PURPOSE:To obtain a magnetic bubble memory element having a gate section immune to a shift at mask alignment, by shifting a conductor pattern toward a prescribed direction by a prescribed number of times of the minimum pattern width. CONSTITUTION:The conductor pattern (a) having 1mum of the minimum width or the like transferring magnetic bubbles having 2mum of diameter from the 1st transfer path M to the 2nd transfer path (m) is shifted by 1/4-3/4 of the minimum width, 0.5mum, toward the bubble transfer direction of the transfer path M. Thus, even if the pattern (a) is shifted by 0.5mum or the like to the left, the pattern (a) does not exceed the shoulder part of ''Permalloy'' pattern (c) of the transfer path M, and the magnetic bubble transfer is done in excellent way without increasing the transfer distance to a pattern (d). As a result, the magnetic bubble memory having the gate immune to the shift of mask alignment is obtained. |
