| 摘要 |
PROBLEM TO BE SOLVED: To provide a process capable of stably producing ferroelectric thin-film elements which are sufficiently controlled in chemical compsn., are good in surface morphology, are good in electrical characteristics, such as leak current and dielectric constant, and are adequately usable for high-function optical modulation elements, non-volatile memories, capacitors, etc., with good mass productivity. SOLUTION: A buffer layer consisting of a strontium titanate thin-film is epitaxially grown and formed by a sputtering process using a target of 1:1 to <2.3 in Sr/Ti ratio on a substrate having a strontium titanate single crystal thin film or strontium titanate single crystal thin film doped with an impurity atom and an ABO3 type perovskite ferroelectric thin-film optical waveguide of epitaxial or single orientability is formed on the buffer layer. |
