| 发明名称 |
Device fabrication using DUV/EUV pattern delineation |
| 摘要 |
<p>The fabrication of integrated circuit devices (24) built to design rules of 0.18 mu m and below uses patterning radiation (20) in the EUV spectrum. Optimized processing conditions take advantage of independently developed EUV characteristics such as short resist absorption lengths. <IMAGE></p> |
| 申请公布号 |
EP0710890(B1) |
申请公布日期 |
1999.12.29 |
| 申请号 |
EP19950307227 |
申请日期 |
1995.10.11 |
| 申请人 |
AT&T CORP. |
发明人 |
TENNANT, DONALD MILAN;WOOD II, OBERT REEVES;WHITE, DONALD L. |
| 分类号 |
G03F1/24;G03F1/32;G03F7/20;H01L21/027;(IPC1-7):G03F7/20 |
主分类号 |
G03F1/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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