| 摘要 |
PURPOSE:To facilitate the manufacture and improve the reproducibility by a method wherein impurity diffusion using a narrow aperture is performed and thus the shape of a diffusion front is formed in an arc shape. CONSTITUTION:An N type clad layer 2, an N type, P type or undoped active layer 3, a P type clad layer 4, and an N type current stricture layer 5 are formed on an N type semiconductor substrate 1. Next, using a mask of impurity diffusion provided with the narrow aperture of width less than 2.5mum, a P type impurity is diffused until it reaches the P type clad layer so that the shape of the diffusion front of the impurity diffused region 7 becomes in a form close to an arc. The semiconductor laser having such a narrow distribution of gain is oscillated to the axial direction by multi-modes, and oscillated stably also to the deformation of the distribution of carriers due to induction emission, and therefore bending, etc. doesnot generate in the characteristic of current-photooutput. |
