| 摘要 |
PURPOSE:To enhance the working accuracy and to work a material in accordance with the dimensions of a mask, by etching the material using a photoresist film contg. a substance having C-F bonds as the mask. CONSTITUTION:A material to be worked is etched by using a photoresist film of a desired shape stuck on the material as a mask. The photoresist film contains a substance having C-F bonds. For example, a polycrystalline Si film 8 is formed on a thin SiO2 film 10, and a film contg. a compound having C-F bonds such as 1, 1, 1-trifluoropropyl-methyldichlorosilane is used as a photoresist film 7. The Si film 8 under the film 7 is etched almost vertically with slight side-etching even when overetching is carried out. |
