MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve resist pattern contrast and to reduce its reactivity to O2 plasma by a method wherein positive-type photosensitive resin is allowed to react with an organic solvent containing an aromatic compound as its chief component. CONSTITUTION:A single crystal semiconductor Inp layer 2 formed on a semi- insulating crystal substrate 1 is coated with an approximately 13mum-thick photoresist layer 13 to be subjected to a pre-baking process. Selective radiation follows wherein optical energy 1.5 times larger than in a conventional method is projected, whereafter the photoresist 13 is placed in an organic solvent containing an aromatic compound for approximately 10min at room temperature. Development is conducted in a solution of MF312:H2O=1:1 for a period approximately two times longer than in a conventional method, which results in a high-contrast resist pattern. The entire surface is then exposed to O2 plasma 3.