| 摘要 |
PURPOSE:To obtain the element having a low forward voltage and high mechanical strength for the titled thyristor by a method wherein, in the case of the thyristor having P type and N type regions interposed between supporting members, a thyristor and a diode are intergrated in a ntiparallel form within a sheet of semiconductor substrate, the P type and N type regions are provided bewteen supporting members respectively using Al and Au-Sb alloyed metal. CONSTITUTION:An N type Si layer 1 is deposited on a supporting plate 7 having the coefficient of thermal expansion of Mo or W or the like similar to Si, a part of which is used as diode part I and the remaining part is used as thyristor part II. Also, an N<+> type region 4 is formed on the diode part I through the intermediary of the prescribed metal foil 6 located at the bottom face of the substrate, lifetime, killer such as Au and the like is injected in the region 4, and a P<+> type region 5 is formed on the thyristor part II adjoining to the region 4 through the intermediary of the metal foil 6. After that a P type layer 2 is deposited on the surface of the substrate 1 and an N<+> region 3 is provided in the layer 2. In this constitution, a metal foil 6 is composed of a composite material made of an Al foil 8 and an alloy foil 9 of Au and Sb, while the alloy foil 9 is situated under the region 4. |
