| 发明名称 |
Beryllium-gold ohmic contact to a semiconductor device |
| 摘要 |
An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed.
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| 申请公布号 |
US4414561(A) |
申请公布日期 |
1983.11.08 |
| 申请号 |
US19820415664 |
申请日期 |
1982.09.07 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
KERAMIDAS, VASSILIS G.;MCCOY, ROBERT J.;TEMKIN, HENRYK |
| 分类号 |
H01L21/285;H01L29/45;(IPC1-7):H01L23/48;H01L29/46;H01L29/62 |
主分类号 |
H01L21/285 |
| 代理机构 |
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