| 摘要 |
PURPOSE:To detect a defect by means of an X-ray image by a method wherein a liquid resisting X-ray penetration is allowed to enter a defect in a semiconductor device sealed in such material as resin that X-ray pass through with ease. CONSTITUTION:An iodine preparation (resisting X-ray penetration) is contained in a pressure vessel. A semiconductor device is placed in the liquid to be subjected to a pressure of 4-5kg/cm<2> for several hours. The semiconductor device, upon completion of the process, is rinsed, exposed to X-ray radiation, for the display on a CRT of the image produced by X-ray penetration. Iodine preparation 6', 7' invading into a crack 6 or slit 7 is clearly detected. By using this method, a defect if any is clearly detected, and the route of infiltration of the iodine preparation is observed. |
