| 摘要 |
PURPOSE:To improve a growth rate and to prevent nonuniform etching in the stage of nitriding a sample with the activated nitrogen formed in an electric discharge chamber disposed separately from a reaction chamber by introducing a gas contg. a halogen atom into the reaction chamber. CONSTITUTION:A gas contg. nitrogen supplied into a vacuum vessel is dissociated by electric discharge with the microwave electric power introduced in an electric discharge chamber 16 to form activated nitrogen of a long life. The activated nitrogen is transported into a reaction chamber 18 provided isolatedly from the chamber 16. A gas contg. a halogen atom is introduced into the chamber 18 through a gaseous halogen introducing port 29. The activated nitrogen is allowed to react with the sample 26 heated in the chamber 18 to nitride the surface of the sample 26 directly. The nitride film is formed at a high growth rate on the sample by the above-mentioned method and nonuniform etching is prevented. |
