| 摘要 |
PURPOSE:To reduce bird beaks to encroach upon the element region of a semiconductor device by a method wherein after silicon at regions removed with an oxidation resistive coating is removed at proper depth, oxidation is performed to the inner sides from the coating pattern of the small coating using the small coating as the mask. CONSTITUTION:After an oxide film 32 and an oxidation resistive coating 33 are formed on a silicon substrate 31, thermal oxide films 34 and an oxide film 35 are formed. The oxide films 34, 35 are etched using a photo resist 36 smaller than the coating 33 as the mask, and the photo resist 36 is peeled off. The oxidation resistive coating 33 is etched using the remaining oxide film 35 as the mask, and selective oxidation is performed using the remaining coating 37 as the mask to form oxide films 38. When the selective oxide films are formed by this way, stress to be generated when second time oxidation is performed is mitigated, and the semiconductor device containing no crystal defect and having no reduction of carrier mobility can be offered. |
