| 摘要 |
PURPOSE:To easily realize junction with good bonding efficiency by employing a structure that solder plating is executed at the inside of thick plating of metal as a projected electrode for flip chip junction. CONSTITUTION:After electrodes 12-14 of source, gate and drain are provided in the same way as the conventional device, solder platings 72-74 for bonding are executed, prior to the thick platings 82-84 of metal for forming high projected electrode. Next, the solder is exposed by polishing the upper part of projected electrode, and a semiconductor chip 1 is bonded to a carrier 5 through the solder material 92-94, thus completing a titled device. According to this structure, soldering is carried out by soft solder in place of the thermally pressurized bonding and a temperature rises only up to a solder melting point. Therefore, a bonding temperature can be selected in accordance with a solder material, pressure can also be lowered and both workability and reliability are improved. |
