| 摘要 |
PURPOSE:To reduce the damage to a wafer by altering the ashing position of the wafer due to temperature change by a shape memory alloy. CONSTITUTION:A generator of a plasma 16 has a microwave generator 11, an ashing gas 12, a chamber 13 for filling the gas 12, and a microwave transmitting window 14 for introducing a microwave 15 into the chamber 13. A wafer holder 20 having a shape memory alloy 19 is provided at least at part of supporting means for supporting a wafer 18 coated with resist 17 to be removed in the chamber 13. Thus, the alloy 19 is used at least at part of the supporting means of the wafer 18 to alter the ashing position of the wafer 18 in response to the change of temperature or the like to reduce the damage of the wafer 18.
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