SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To reduce the average power consumption and at the same time to realize large capacity and high reliability for a semiconductor without sacrificing the access time, by selecting a driver of a word line or a bit line in response to the address change. CONSTITUTION:Word line drivers 41 and 42 drive an FET44 of word lines 16 and 17 of a memory cell array via an SCR35. An address change detecting circuit 43 detects the changing time of the address signal input and generates an address change pulse of a micro width. A gate current control circuit 36 supplies a current to the gate of the SCR35 of drivers 41 and 42 by using the address change pulse as a trigger. Then the SCR35 of one of the selected drivers 41 and 42 is turned on in a stand-by mode when no address change occurs. Then a word line is selected. The SCR of the non-selected driver is turned off. Thus the power consumption is reduced.