| 摘要 |
PURPOSE:To simplify both control of an etching and the process of manufacture of the titled semiconductor device by a method wherein the difference in refractive index in horizontal direction is provided on a P-N junction face, and a high density impurity diffusion layer is provided around an active layer. CONSTITUTION:The specified region on a double-hetero epitaxial substrate is removed, and a concavity 16 is provided on the confinement region forming part of a clad layer 14. Then, a part of a CVDSiO film 15 is newly removed, a window 17 of stripe pattern is provided, and a high density Zn diffusion is performed. Said diffusion is to be performed in such a manner that the Zn diffusion depth from the window 17 will be limited within the active layer 13 or a little shallower so that the Zn diffused from a concavity 16 will be entered into an N type clad layer 12. As a result, the refractive index of the high density Zn diffusion layer on a P<+> region 18a is reduced, the region located below the window 17 is surrounded by a low-refractive-index layer, and there exists a refractive difference in the horizontal direction of the P-N junction surface too, thereby enabling to stabilize the lateral mode of the laser oscillation. Also, the injected current mainly runs directly below a P<+> region 18b, and turned to the laser having a threshold current value. Then, an SiO2 film 19 is formed by removing an SiO2 film 15, the SiO2 film on a P<+> region 18b is removed, and an electrode is vapor-deposited. An Au/Zn alloy layer 20 is formed on the Zn diffusion layer 18b, and an Au/Sn alloy layer 21 is formed on the back side of the substrate 11. |
