发明名称 PROCESS OF ETCHING ORGANIC FILM
摘要 PURPOSE:To reduce the time required for burning to ashes by a method wherein, when an organic film containing no metal is burnt to ashes by means of oxygen plasma etching, the film is plasma burnt to ashes after it is immersed in alkali solution. CONSTITUTION:After a substrate such as Permalloy is coated with resist forming a resist pattern by means of ordinary development by exposure, the entire Permalloy is irradiated by shower-like argon ion beams for ion milling. Next after finishing the etching, the Permalloy is immersed in solution containing developer for resist and water at the ratio of 1:1 for around 10sec to be dried up after washing for 30sec. Then the Permalloy is placed in an ordinary cylindrical plasma burner to ashes with an etch-tunnel to burn the residual resist on the Permalloy at high frequency power of 250W, oxygen flow rate of 155cc/min and pressure of 1 Torr. Through these procedures, a bit of alkali ion is sticked on the surface of organic film to be provided with catalyzing property accelerating the burning of film to ashes.
申请公布号 JPS58178524(A) 申请公布日期 1983.10.19
申请号 JP19820061902 申请日期 1982.04.14
申请人 NIPPON DENKI KK 发明人 GOKAN HIROSHI
分类号 H01L21/302;H01F41/34;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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