发明名称 Photoelectric conversion semiconductor and manufacturing method thereof
摘要 A semi-amorphous, photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer, such as hydrogen, chlorine or fluorine, and the microcrystalline semiconductor has a lattice strain and a particle size of 5 to 200 A.
申请公布号 US4409134(A) 申请公布日期 1983.10.11
申请号 US19810237609 申请日期 1981.02.24
申请人 YAMAZAKI, SHUNPEI 发明人 YAMAZAKI, SHUNPEI
分类号 H01L31/04;H01L21/205;H01L31/0376;H01L31/20;(IPC1-7):H01C13/00 主分类号 H01L31/04
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