MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To embed SiO2 in a groove providing a flat separating layer by a method wherein single Si or multiple crystal indefinitely formed Si is grown on a concave bottom surface of Si substrate and an Si film formed into a mask from Si3 N4 film is selectively oxidized. CONSTITUTION:SiO2 14 on p type Si substrate is coated with Si3N4 forming a concave groove 17 by means of reacting ion etching to be coated with Si3N4 19. Then Si3N4 19 is reacting ion etched again leaving Si3N4 19 on the side walls of the groove. B ion 4 is implanted into exposed substrate 13 to form p<+> layer 5 selectively growing Si 22 and selectively oxidizing the same to form field oxide film 23. Si3N4 15 and SiO2 14 are removed. Gate electrode will not be broken in case a wiring is formed since the surface of element forming region 20 and separating layer 23 are on the same plain while the distortion of side walls from the substrate is little preventing any defect from happening since they are coated with Si3N4 to grow SiO2.