| 摘要 |
PURPOSE:To dry-etch a sample with high safety and at low cost without using a special etchent gas by disposing an organic high molecular material containing fluorine into a chamber, applying a high-frequency electric field and electrolytically dissociating a gas in the chamber. CONSTITUTION:A Teflon sheet 12 is disposed over the whole region of the surface of an etching electrode 8. The sample 10 is placed onto the Teflon sheet 12. When ions i collide with the sheet 12, fluorine (fluorine radicals) F* activated is generated from the sheet 12, and etches SiO2, etc. An etching rate can also be adjusted when high-frequency energy charged is altered. Substances, which can be dry-etched by a Freon group gas, such as SiO2, Si, Cr2O3, etc. are used as blanks which can be etched through the method, but a photoresist cannot be used as a mask material when air is introduced. |
