| 摘要 |
PURPOSE:To obtain a bi-polar transistor of extremely small size and high speed of operation by a method wherein a base conductive film constituted of a Mo silicide film is provided on the peripheral parts of a base region, then an emitter conductive film is adhered via an insulation film while filling a window opened at the center thereof, and an emitter region formed on the base center region is made to contact thereto. CONSTITUTION:A thick field SiO2 film 12 is formed on the peripheral part of a p type Si substrate 11, then the MoSi2 film 13 containing P is adhered over the entire surface including it, and an aperture is opened, corresponded to an emitter forming region. Next, only the surface layer part of the film 13 is changed into an SiO2 film 14 by performing a heat treatment in moistened oxygen air current at 700 deg.C, and P ions and B ions are implanted over the entire surface, accordingly a p<+> type emitter region 16 and an n type base center region 15 positioned thereunder are formed in the substrate 11 which is exposed in the aperture. Simultaneously, P in the film 13 is diffused resulting in the generation of an n type base region 17 surrounding the regions 16 and 15, and thus an emitter conductive film 18 contacted on the region 16 is formed while being extended on the film 14. |
