| 摘要 |
PURPOSE:To facilitate small resistivity as bulk, ohmic contact with a silicon substrate and a high melting point in electrode wirings of a semiconductor device by providing the wirings which are made of intermetallic compound of high melting point metal and aluminum (Al). CONSTITUTION:Polysilicon gate electrode for a word line is formed. Then, a PSG film 5 of an interlayer insulating film is formed, and unnecessary part is removed through an etching step. A thin film 6 which is formed of a high melting point for a bit line and aluminum compound is formed by a sputter growing method of titanium aluminum alloy (TiAl3) with a target having a division ratio of 1:6.5 of aluminum (Al) to titanium (Ti). Further, an oxidized film 7 for a cover is formed, the prescribed etching step is performed, and a thin Al-Si alloy film 8 of second layer is formed. The high melting point metal includes titanium (Ti), zirconium (Zr), niobium (Nb), tantalum (Ta), molybdenum (Mo) and tungsten (W) and the like. |
