| 摘要 |
PURPOSE:To enable a high speed operation, by forming word lines, power source lines, etc. of a good conductive material different from that of a wiring layer for gate electrode. CONSTITUTION:A static type memory is constituted of a semiconductor substrate 1, impurity diffused layers 2, isolation regions 3, etc. A poly Si wiring layer for word line WLP runs on the region 3. Wirings for gate electrode G3 and G4 of MOS transistors Q3 and Q4 which are cross-bound are formed of a conductive layer equal to that of the layer WLP via an insulation layer 4. The word line WL, a ground line GND, and the power source line Vcc are formed of a good conductive material such as molybdenum. |
