| 摘要 |
PURPOSE:To obtain a superior photoconductive material, by forming on a conductive substrate a photoconductive amorphous silicon layer having a layer region contg. O in a specified distribution and a layer region contg. an element of group V of the periodic table on the side of the substrate in this region, and another amorphous layer contg. Si, C, and halogen on this layer. CONSTITUTION:On a conductive substrate 101 a photoconductive amorphous Si layer 102 having a layer region 103 contg. O in a distribution uneven and rich in the thickness direction on the side of the substrate 101, and decreasing continuously in the direction reverse to the substrate 101 to low concn. or zero at the interface with a layer 106, and a layer region 104 contg. an element of group V of the periodic table, such as P or As, uniformly in the thickness direction on the side of the substrate 101 overlapped on the region 103. A photoconductive material 100 superior in durability, moisture resistance, etc. and good in adhesion between the substrate, and each layer and not causing peeling is obtained by forming on the layer 102 another amorphous layer 106 contg. Si, H, and halogen. |
