| 摘要 |
<p>PURPOSE:To prevent matching between the wall surface of epitaxial layer at the edge of mark region and a particular orientation and lower the height of epitaxial-crown by inclining the edge of said mark region for the particular orientation of crystal axis. CONSTITUTION:A positioning mark is formed on the silicon substrate surface of orientation 111, the positioning mark and surface of periphery thereof are covered with an insulating film, a mark region of which edge inclining crosses the both axes of <211> and <110>, and an epitaxial layer is grown on the silicon substrate surface except for the mark region. Namely, the mark region is formed as a rectangular of which each side crosses incliningly the axes <211> and <110>, and the edges cross the orientation of crystal axis. Thereby, height of epitaxial-crown 6 can be lowered.</p> |
