发明名称 FORMING METHOD OF ELECTRODE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make it possible to form an electrode which is easily soldered by such an arrangement wherein an electric conductive layer is formed on a semiconductor substrate by ohmic contact, and another electric conductive layer which is harder to be oxidized than said electric conductive layer is further formed thereon. CONSTITUTION:After an n type semiconductor layer 3 and a reflection prevention film 4 are formed on a p type semiconductor substrate 1, the first electric conductive layer 5 is formed on the substrate 1, and it is calcined. Next, the second electric conductive layer 6, which is harder to be oxidized than the layer 5, is further formed thereon. Next, an electric conductive layer 7 for the layer 3 is formed on the film 4. Next, the substrate 1 is placed in a calciner and the layer 6 is calcined. At this time, the layer 7 joins with the layer 3, passing through the film 4. By this, lead wire can be easily soldered to the electrode 6, even if the surface of the electrode is not treated by oxidization prevention film process.
申请公布号 JPS58158917(A) 申请公布日期 1983.09.21
申请号 JP19820043571 申请日期 1982.03.16
申请人 MITSUBISHI DENKI KK 发明人 HISAMOTO YOSHIAKI
分类号 H01L31/04;H01L21/28;H01L21/283;H01L21/288 主分类号 H01L31/04
代理机构 代理人
主权项
地址