| 摘要 |
<p>PURPOSE:To remove efficiently harmful gases in waste gas in the dry etching stage in production of integrated circuits by passing said waste gas through an active carbon bed deposited with ammonium halide. CONSTITUTION:Harmful gaseous components such as HF, SiF4, F, HCl, Cl and the like are incorporated in waste gas produced when thin films of SiO2, Al, polycrystalline Si, etc. on wafers are dry etched in the production stage of integrated circuits; therefore, the waste gas is passed through an active carbon bed deposited with alluminum halide such as NH4F or NH4Cl. The above-mentioned harmful gases in the waste gas are removed with the active carbon and are released as harmless gases into the atmosphere.</p> |
