| 摘要 |
The invention is a method for producing a thin film semi-conductor material on an amorphous substrate (10) having a predetermined crystallographic orientation. The method includes forming a plurality of crystalline material islands (14) on the surface (18) of an amorphous substrate (10), forming a wall (20) around each island (14) of crystalline material with a material (16) having a higher melting temperature, then laser melting the crystalline material to promote the predetermined crystallographic orientation upon cooling. The walls (20) confine the thin layer of crystalline material (16) during laser melting, thereby preserving the straight edges and square corners necessary to promote the formation of the preferred crystallographic orientation upon cooling such as the (100) orientation of silicon. |
