发明名称 SEMICONDUCTOR LASER APPARATUS
摘要 PURPOSE:To prevent generation of short-circuit fault of P-N junction caused by adhesion of solder by providing the P-N junction at the end of chip to the location being far from the chip junction surface due to the solder. CONSTITUTION:The junction surface consisting of an anode electrode 2 surface is further lowered at both sides of a chip 1 (located upward in the figure because a chip 1 is fixed with the upside down). Namely, both ends of chip 1 from where a laser beam is emitted are protected by an insulating film but the P-N junction exposed in both sides of chip 1 has a possibility of being short-circuitted by solder 3. Both ends of active layer 7 is thus formed low, in view of making large an interval between the location of active layer 7 in both sides of chip and the junction surface at the surface of electrode 2. Thereby, the P-N junction in both sides of chip 1 is protected from short-circuit by solder 3.
申请公布号 JPS58142588(A) 申请公布日期 1983.08.24
申请号 JP19820024403 申请日期 1982.02.19
申请人 HITACHI SEISAKUSHO KK 发明人 SAWAI MASAAKI
分类号 H01S5/00;H01S5/02;H01S5/022 主分类号 H01S5/00
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