发明名称 Method of heat treating semiconductor wafers
摘要 To achieve a largely trouble-free semiconductor arrangement, in particular of integrated circuits, the semiconductor wafers, which have been cleaned in the standard way for the heat treatment, are transferred directly from the cleaning system to the furnace used for the heat treatment without coming into contact with the outside air. For this reason, the tray carrying the semiconductor wafers to be thermally treated is pushed at a distance from the tube wall into the quartz tube receiving the semiconductor wafers during the heat treatment and placed there in a slip-free manner. In the same way, during the loading of the tray with the semiconductor wafers, any friction between the wafers and the tray or the gripping device, which touches the individual wafers only at the edge, is avoided. In cases where a sliding movement of solid bodies which are in contact with one another is unavoidable in the presence of the semiconductor wafers, the relative speed of said bodies with respect to one another is limited to a maximum of 5 mm/sec. The semiconductor wafers are transferred from one tray to another, for example from the cleaning tray to the heat-treatment tray, using a suction device. The application of these measures according to the invention achieves the result that the surface of the semiconductor wafers is completely dust-free, and this appreciably enhances the quality of the semiconductor devices obtained.
申请公布号 DE3204436(A1) 申请公布日期 1983.08.18
申请号 DE19823204436 申请日期 1982.02.09
申请人 SIEMENS AG 发明人 MEIDINGER,HANS;WEY,ALFRED;FAERBER,HANS
分类号 C30B31/10;C30B33/00;C30B35/00;H01L21/324;(IPC1-7):H01L21/32;H01L21/47 主分类号 C30B31/10
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