| 摘要 |
PURPOSE:To improve the directivity of laser beams, and to obtain a picture having excellent resolution by independently controlling currents to each laser section. CONSTITUTION:A grating is prepared onto an n type (100)-face InP substrate having 2X10<18>cm<-3> concentration through an interference exposure method using an Ar laser or a Ho-Cd laser and etching. A guide layer 13, an active layer 14, an InP layer 15 and lastly a cap layer 16 are grown through a liquid growth method. A SiO2 film is attached onto the grown surface in approximately 1,500Angstrom through a high-frequency (RE) sputtering method or a CVD method, a SiO2 mask is prepared, and these layers are etched up to the InP substrate 5 by a Br ethyl etching liquid. A section mesa-etched through the liquid growth method is buried by a p type InP layer in 2X10<17>cm<-3> concentration of 2mum and an n type InP layer in 5X10<17>cm<-3> concentration of 2mum. Lead wires for injecting currents for flowing currents are fitted to each of lasers through thermal bonding. |
